Provides prime silicon wafers, SOI, epitaxial layers, dicing tapes, and specialty wafers (SiC, GaAs). High quality, short lead-times, and global logistics from Tokyo to worldwide markets.
Our partner was founded in Fussa, Tokyo (2008.4) and expanded to Kabe in 2012, later Nishitama (2019). With over 80 employees and annual turnover exceeding 2 trillion JPY (~14 million USD), we specialize in semiconductor materials. Our principle: Growth and Gratitude. We prioritize customer needs with gratitude, delivering high-quality products and short delivery periods.
High-performance engineered wafers for MEMS, power devices, RF and photonics.
Buried oxide layer for reduced parasitic capacitance, ideal for high-speed and low-power applications.
Single-crystal silicon deposition for precise doping and thickness control.
SiO₂, LP-TEOS, P-SiO₂, LP-SiN, Poly-Si, RTO, and more.
W, EPI, AlSi, Cu, GaAs, Al-Cu, GaN, Ti, TiN, etc.
Beyond standard silicon — compound semiconductors, wafer thinning, dicing, bonding and more.
High thermal conductivity for power electronics.
Optical & LED substrates.
RF, photonics, high-speed devices.
Thinning, dicing, bonding, patterned wafers.
FOUP, FOSB, wafer shipping boxes, dicing frames.
Custom designs for MEMS and advanced packaging.
High-performance UV and Non-UV tapes engineered for dicing, backgrinding, and wafer handling.
High adhesion under UV light, easy release after exposure. Ideal for thin wafer dicing.
Less viscosity, safe peel-off using proper procedure. Anti-static, water resistant, and chemical resistant.
High-grade silicon wafers for semiconductor fabrication, R&D, and industrial processes. Available in various diameters and specifications.
Highest quality epitaxy-ready, particle-free, for advanced nodes.
Cost-effective for process control, equipment qualification.
Carrier wafers, thermal oxide, handling substrates.
Small quantity / custom shapes for R&D and prototyping.
Request a quote for prime wafers, SOI, epi, SiC, GaAs, or custom dicing tapes. Shorter lead-times and global shipping.